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| Transistors with built-in Resistor UNR4211/4212/4213/4214/4215/4216/4217/ 4218/4219/4210/421D/421E/421F/421K/421L (UN4211/4212/4213/4214/4215/4216/4217/4218/4219/ 4210/421D/421E/421F/421K/421L) For digital circuits 3.00.2 Silicon NPN epitaxial planer transistor 4.00.2 Unit: mm I Features G 0.70.1 G 1 2 3 I Resistance by Part Number G G G G G G G G G G G G G G G 1.27 1.27 2.540.15 UNR4211 UNR4212 UNR4213 UNR4214 UNR4215 UNR4216 UNR4217 UNR4218 UNR4219 UNR4210 UNR421D UNR421E UNR421F UNR421K UNR421L (R1) 10k 22k 47k 10k 10k 4.7k 22k 0.51k 1k 47k 47k 47k 4.7k 10k 4.7k (R2) 10k 22k 47k 47k -- -- -- 5.1k 10k -- 10k 22k 10k 4.7k 4.7k 1 : Emitter 2 : Collector 3 : Base New S Type Package Internal Connection R1 2.00.2 marking +0.2 0.45-0.1 Costs can be reduced through downsizing of the equipment and reduction of the number of parts. New S type package, allowing supply with the radial taping. 15.60.5 C B R2 E I Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25C) Ratings 50 50 100 300 150 -55 to +150 Unit V V mA mW C C Note.) The Part numbers in the Parenthesis show conventional part number. 1 Transistors with built-in Resistor UNR4211/4212/4213/4214/4215/4216/4217/ 4218/4219/4210/421D/421E/421F/421K/421L I Electrical Characteristics Parameter Collector cutoff current UNR4211 UNR4212/4214/421E/421D UNR4213 Emitter cutoff current UNR4215/4216/4217/4210 UNR421F/421K UNR4219 UNR4218/421L Collector to base voltage Collector to emitter voltage UNR4211 Forward current transfer ratio UNR4212/421E UNR4213/4214 UNR4215*/4216*/4217*/4210* UNR421F/421D/4219 UNR4218/421K/421L Collector to emitter saturation voltage Output voltage high level Output voltage low level UNR4213/421K UNR421D UNR421E Transition frequency UNR4211/4214/4215/421K UNR4212/4217 Input resistance UNR4213/421D/421E/4210 UNR4216/421F/421L UNR4218 UNR4219 UNR4211/4212/4213/421L UNR4214 Resistance ratio UNR4218/4219 UNR421D UNR421E UNR421F UNR421K (Ta=25C) Symbol ICBO ICEO Conditions VCB = 50V, IE = 0 VCE = 50V, IB = 0 min typ max 0.1 0.5 0.5 0.2 0.1 IEBO VEB = 6V, IC = 0 0.01 1.0 1.5 2.0 VCBO VCEO IC = 10A, IE = 0 IC = 2mA, IB = 0 50 50 35 60 hFE VCE = 10V, IC = 5mA 80 160 30 20 VCE(sat) VOH IC = 10mA, IB = 0.3mA VCC = 5V, VB = 0.5V, RL = 1k VCC = 5V, VB = 2.5V, RL = 1k VOL VCC = 5V, VB = 3.5V, RL = 1k VCC = 5V, VB = 10V, RL = 1k VCC = 5V, VB = 6V, RL = 1k fT VCB = 10V, IE = -2mA, f = 200MHz 150 10 22 R1 (-30%) 47 4.7 0.51 1 0.8 0.17 0.08 R1/R2 3.7 1.7 0.37 1.7 1.0 0.21 0.1 4.7 2.14 0.47 2.13 1.2 0.25 0.12 5.7 2.6 0.57 2.6 (+30%) k 4.9 0.2 0.2 0.2 0.2 MHz V 0.25 V V 460 V V mA Unit A A * hFE rank classification (UNR4215/4216/4217/4210) Rank hFE Q 160 to 260 R 210 to 340 S 290 to 460 2 Transistors with built-in Resistor Common characteristics chart PT -- Ta 400 UNR4211/4212/4213/4214/4215/4216/4217/ 4218/4219/4210/421D/421E/421F/421K/421L Total power dissipation PT (mW) 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (C) Characteristics charts of UNR4211 IC -- VCE 160 140 IB=1.0mA 0.9mA 0.8mA Ta=25C VCE(sat) -- IC 100 hFE -- IC IC/IB=10 400 VCE=10V Collector to emitter saturation voltage VCE(sat) (V) 30 10 3 1 0.3 0.1 -25C 0.03 0.01 0.1 120 100 80 60 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA Forward current transfer ratio hFE Collector current IC (mA) 300 Ta=75C 200 25C 100 -25C 0.2mA 40 20 0 0 2 4 6 8 10 12 25C Ta=75C 0.1mA 0 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C 10000 3000 VO=5V Ta=25C 100 30 VIN -- IO VO=0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 300 100 30 10 3 Input voltage VIN (V) 0.6 0.8 1.0 1.2 1.4 1000 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 3 Transistors with built-in Resistor Characteristics charts of UNR4212 IC -- VCE 160 UNR4211/4212/4213/4214/4215/4216/4217/ 4218/4219/4210/421D/421E/421F/421K/421L VCE(sat) -- IC 100 hFE -- IC IC/IB=10 400 VCE=10V Ta=25C 140 IB=1.0mA 0.9mA 0.8mA Collector to emitter saturation voltage VCE(sat) (V) 30 10 3 1 0.3 0.1 -25C 0.03 0.01 0.1 120 100 80 0.7mA 0.6mA 0.5mA 0.4mA Forward current transfer ratio hFE Collector current IC (mA) 300 Ta=75C 200 25C -25C 0.3mA 60 40 20 0 0 2 4 6 8 10 12 0.2mA 25C Ta=75C 100 0.1mA 0 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C 10000 3000 VO=5V Ta=25C 100 30 VIN -- IO VO=0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 Input voltage VIN (V) 1000 300 100 30 10 3 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.6 0.8 1.0 1.2 1.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR4213 IC -- VCE 160 100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 400 Ta=25C hFE -- IC VCE=10V Collector current IC (mA) 120 100 80 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA 30 10 3 1 0.3 25C 0.1 0.03 0.01 0.1 -25C Ta=75C Forward current transfer ratio hFE 140 IB=1.0mA 350 300 250 200 150 100 50 0 Ta=75C 25C -25C 60 40 20 0 0 2 4 6 8 10 12 0.2mA 0.1mA 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 4 Transistors with built-in Resistor Cob -- VCB 6 UNR4211/4212/4213/4214/4215/4216/4217/ 4218/4219/4210/421D/421E/421F/421K/421L IO -- VIN VIN -- IO VO=5V Ta=25C 100 30 VO=0.2V Ta=25C Collector output capacitance Cob (pF) 5 f=1MHz IE=0 Ta=25C 10000 3000 Output current IO (A) 4 Input voltage VIN (V) 1000 300 100 30 10 3 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.6 0.8 1.0 1.2 1.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR4214 IC -- VCE 160 100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=10 hFE -- IC 400 VCE=10V 30 10 3 1 0.3 Ta=75C 0.1 0.03 0.01 0.1 25C IB=1.0mA Collector current IC (mA) 120 100 80 60 40 20 0 0 2 4 6 8 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA Forward current transfer ratio hFE 140 350 300 250 200 25C 150 -25C 100 50 0 Ta=75C 0.2mA 0.1mA 10 12 -25C 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 10000 f=1MHz IE=0 Ta=25C 3000 IO -- VIN VO=5V Ta=25C 100 30 VIN -- IO VO=0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 Input voltage VIN (V) 1000 300 100 30 10 3 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.6 0.8 1.0 1.2 1.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 5 Transistors with built-in Resistor Characteristics charts of UNR4215 IC -- VCE 160 UNR4211/4212/4213/4214/4215/4216/4217/ 4218/4219/4210/421D/421E/421F/421K/421L VCE(sat) -- IC 100 hFE -- IC IC/IB=10 400 VCE=10V 30 10 3 1 0.3 0.1 0.03 0.01 0.1 25C Forward current transfer ratio hFE 140 IB=1.0mA 0.9mA 0.8mA Ta=25C Collector to emitter saturation voltage VCE(sat) (V) 350 300 250 200 25C 150 100 50 0 -25C Ta=75C Collector current IC (mA) 120 100 80 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA 60 0.2mA 40 20 0 0 2 4 6 8 10 12 0.1mA Ta=75C -25C 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C 10000 3000 VO=5V Ta=25C 100 30 VIN -- IO VO=0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 300 100 30 10 3 Input voltage VIN (V) 0.6 0.8 1.0 1.2 1.4 1000 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR4216 IC -- VCE 160 VCE(sat) -- IC 100 hFE -- IC IC/IB=10 400 VCE=10V 350 Ta=75C 300 250 -25C 200 150 100 50 0 25C Ta=25C 140 IB=1.0mA Collector to emitter saturation voltage VCE(sat) (V) 30 10 3 1 0.3 Ta=75C 0.1 0.03 0.01 0.1 25C 120 100 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 80 60 40 20 0 0 2 4 6 8 0.4mA 0.3mA 0.2mA 0.1mA -25C 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 10 12 Collector to emitter voltage VCE (V) Collector current IC (mA) Forward current transfer ratio hFE Collector current IC (mA) Collector current IC (mA) 6 Transistors with built-in Resistor Cob -- VCB 6 UNR4211/4212/4213/4214/4215/4216/4217/ 4218/4219/4210/421D/421E/421F/421K/421L IO -- VIN VIN -- IO VO=5V Ta=25C 100 30 VO=0.2V Ta=25C Collector output capacitance Cob (pF) 5 f=1MHz IE=0 Ta=25C 10000 3000 Output current IO (A) 4 Input voltage VIN (V) 1000 300 100 30 10 3 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.6 0.8 1.0 1.2 1.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR4217 IC -- VCE 120 100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 400 hFE -- IC VCE=10V 100 30 10 3 1 0.3 25C 0.1 0.03 0.01 0.1 Forward current transfer ratio hFE Collector current IC (mA) Ta=25C IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 350 300 250 200 Ta=75C 150 100 50 0 25C -25C 80 0.4mA 0.3mA 0.2mA 60 Ta=75C 40 20 0.1mA -25C 0.3 1 3 10 30 100 0 0 2 4 6 8 10 12 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C 10000 3000 VO=5V Ta=25C 100 30 VIN -- IO VO=0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 Input voltage VIN (V) 1000 300 100 30 10 3 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.6 0.8 1.0 1.2 1.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 7 Transistors with built-in Resistor Characteristics charts of UNR4218 IC -- VCE 240 100 UNR4211/4212/4213/4214/4215/4216/4217/ 4218/4219/4210/421D/421E/421F/421K/421L VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=10 hFE -- IC 160 VCE=10V 200 30 10 3 1 Ta=75C 0.3 0.1 0.03 -25C 0.01 0.1 25C Forward current transfer ratio hFE Collector current IC (mA) 160 IB=1.0mA 0.9mA 0.8mA 0.7mA 120 Ta=75C 80 25C -25C 40 120 0.6mA 0.5mA 0.4mA 0.3mA 0.2mA 0 0 2 4 6 8 0.1mA 10 12 80 40 0 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C 10000 3000 VO=5V Ta=25C 100 30 VIN -- IO VO=0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 300 100 30 10 3 Input voltage VIN (V) 0.6 0.8 1.0 1.2 1.4 1000 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR4219 IC -- VCE 240 100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=10 160 hFE -- IC VCE=10V 200 160 IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 10 3 1 Ta=75C 0.3 25C 0.1 0.03 -25C 0.01 0.1 Forward current transfer ratio hFE 30 Collector current IC (mA) 120 120 0.5mA 0.4mA 0.3mA 40 0.2mA 0.1mA 0 0 2 4 6 8 10 12 80 Ta=75C 25C -25C 80 40 0 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 8 Transistors with built-in Resistor Cob -- VCB 6 UNR4211/4212/4213/4214/4215/4216/4217/ 4218/4219/4210/421D/421E/421F/421K/421L IO -- VIN VIN -- IO VO=5V Ta=25C Collector output capacitance Cob (pF) 5 f=1MHz IE=0 Ta=25C 10000 3000 100 30 VO=0.2V Ta=25C Output current IO (A) 4 300 100 30 10 3 Input voltage VIN (V) 0.6 0.8 1.0 1.2 1.4 1000 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR4210 IC -- VCE 60 VCE(sat) -- IC 100 hFE -- IC IC/IB=10 400 VCE=10V Collector to emitter saturation voltage VCE(sat) (V) 50 30 10 3 1 Ta=75C 0.3 25C 0.1 0.03 0.01 0.1 -25C Forward current transfer ratio hFE IB=1.0mA 0.9mA 0.8mA Ta=25C 350 300 Ta=75C 250 25C 200 150 100 50 0 -25C Collector current IC (mA) 40 0.4mA 0.5mA 0.6mA 0.7mA 0.1mA 30 0.3mA 20 10 0 0 2 4 6 8 10 12 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C VIN -- IO VO=5V Ta=25C 100 30 VO=0.2V Ta=25C 10000 3000 Collector output capacitance Cob (pF) 5 Output current IO (A) 4 300 100 30 10 3 Input voltage VIN (V) 0.6 0.8 1.0 1.2 1.4 1000 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 9 Transistors with built-in Resistor Characteristics charts of UNR421D IC -- VCE 30 UNR4211/4212/4213/4214/4215/4216/4217/ 4218/4219/4210/421D/421E/421F/421K/421L VCE(sat) -- IC 100 hFE -- IC IC/IB=10 160 VCE=10V Ta=75C 25C -25C 120 Collector to emitter saturation voltage VCE(sat) (V) 25 30 10 3 1 0.3 25C 0.1 0.03 0.01 0.1 -25C IB=1.0mA 20 15 0.2mA 10 0.1mA Forward current transfer ratio hFE 100 Collector current IC (mA) Ta=25C 0.9mA 0.8mA 0.5mA 0.7mA 0.4mA 0.6mA 0.3mA 80 Ta=75C 40 5 0 0 2 4 6 8 10 12 0 0.3 1 3 10 30 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C VIN -- IO VO=5V Ta=25C 100 30 VO=0.2V Ta=25C 10000 3000 Collector output capacitance Cob (pF) 5 Output current IO (A) 4 Input voltage VIN (V) 1000 300 100 30 10 3 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 1.5 2.0 2.5 3.0 3.5 4.0 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR421E IC -- VCE 60 VCE(sat) -- IC 100 hFE -- IC IC/IB=10 160 VCE=10V Collector to emitter saturation voltage VCE(sat) (V) 50 30 10 3 1 Ta=75C 0.3 0.1 0.03 0.01 0.1 25C Forward current transfer ratio hFE IB=1.0mA 0.7mA Ta=25C 0.9mA 0.6mA 0.8mA Collector current IC (mA) 120 Ta=75C 25C -25C 40 0.3mA 0.4mA 0.5mA 0.2mA 30 80 0.1mA 20 40 10 -25C 0 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 0 0 2 4 6 8 10 12 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 10 Transistors with built-in Resistor Cob -- VCB 6 UNR4211/4212/4213/4214/4215/4216/4217/ 4218/4219/4210/421D/421E/421F/421K/421L IO -- VIN VIN -- IO VO=5V Ta=25C 100 30 VO=0.2V Ta=25C Collector output capacitance Cob (pF) 5 f=1MHz IE=0 Ta=25C 10000 3000 Output current IO (A) 4 Input voltage VIN (V) 1000 300 100 30 10 3 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 1.5 2.0 2.5 3.0 3.5 4.0 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR421F IC -- VCE 240 100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=10 160 hFE -- IC VCE=10V 200 30 10 3 1 0.3 25C 0.1 0.03 0.01 0.1 Ta=75C Forward current transfer ratio hFE Collector current IC (mA) 160 0.9mA 0.8mA 0.7mA 0.6mA 120 Ta=75C 80 25C -25C 120 IB=1.0mA 0.5mA 0.4mA 0.3mA 80 40 40 0.2mA 0.1mA 0 0 2 4 6 8 10 12 -25C 0 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C VIN -- IO VO=5V Ta=25C 100 30 VO=0.2V Ta=25C 10000 3000 Collector output capacitance Cob (pF) 5 Output current IO (A) 4 Input voltage VIN (V) 1000 300 100 30 10 3 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.6 0.8 1.0 1.2 1.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 11 Transistors with built-in Resistor Characteristics charts of UNR421K IC -- VCE 240 100 UNR4211/4212/4213/4214/4215/4216/4217/ 4218/4219/4210/421D/421E/421F/421K/421L VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=10 240 hFE -- IC VCE=10V 200 Forward current transfer ratio hFE 200 Collector current IC (mA) 10 160 IB=1.2mA 1.0mA 0.8mA 80 0.6mA 0.4mA 0.2mA 0 0 2 4 6 8 10 12 160 Ta=75C 120 25C 80 -25C 40 120 1 25C 0.1 Ta=75C 40 -25C 0.01 1 3 10 30 100 300 1000 0 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 VIN -- IO f=1MHz IE=0 Ta=25C 100 30 VO=0.2V Ta=25C Collector output capacitance Cob (pF) 5 4 Input voltage VIN (V) 1 3 10 30 100 10 3 1 0.3 0.1 0.03 3 2 1 0 0.01 0.1 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Output current IO (mA) Characteristics charts of UNR421L IC -- VCE 240 100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=10 hFE -- IC 240 VCE=10V 200 Forward current transfer ratio hFE 200 Collector current IC (mA) 10 160 IB=1.0mA 120 0.8mA 0.6mA 80 0.4mA 160 Ta=75C 1 120 25C Ta=75C 25C 0.1 -25C -25C 80 40 0.2mA 0 0 2 4 6 8 10 12 40 0.01 1 3 10 30 100 300 1000 0 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 12 Transistors with built-in Resistor Cob -- VCB 6 100 f=1MHz IE=0 Ta=25C UNR4211/4212/4213/4214/4215/4216/4217/ 4218/4219/4210/421D/421E/421F/421K/421L IO -- VIN VO=0.2V Ta=25C Collector output capacitance Cob (pF) 5 4 Input voltage VIN (V) 10 3 1 2 0.1 1 0 1 3 10 30 100 0.01 0.1 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Output current IO (mA) 13 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be 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(2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. 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Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR |
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